NTR1P02, NVR1P02
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 V, I D = ? 10 m A)
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(V DS = ? 20 V, V GS = 0 V, T J = 25 ° C)
(V DS = ? 20 V, V GS = 0 V, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 20 V, V DS = 0 V)
V (BR)DSS
I DSS
I GSS
? 20
32
? 1.0
? 10
± 100
V
mV/ ° C
m A
nA
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = ? 250 m A)
(Negative Temperature Coefficient)
Static Drain ? to ? Source On ? State Resistance
(V GS = ? 10 V, I D = ? 1.5 A)
(V GS = ? 4.5 V, I D = ? 0.75 A)
V GS(th)
R DS(on)
? 1.1
? 1.9
? 4.0
0.148
0.235
? 2.3
0.180
0.280
V
mV/ ° C
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(V DS = ? 5 V, V GS = 0 V, f = 1.0 MHz)
Output Capacitance
(V DS = ? 5 V, V GS = 0 V, f = 1.0 MHz)
Reverse Transfer Capacitance
(V DS = ? 5 V, V GS = 0 V, f = 1.0 MHz)
C iss
C oss
C rss
165
110
35
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
(V DD = ? 15 V, I D = ? 1 A, V GS = ? 5 V, R G = 2.5 W )
Rise Time
(V DD = ? 15 V, I D = ? 1 A, V GS = ? 5 V, R G = 2.5 W )
Turn ? Off Delay Time
(V DD = ? 15 V, I D = ? 1 A, V GS = ? 5 V, R G = 2.5 W )
Fall Time
(V DD = ? 15 V, I D = ? 1 A, V GS = ? 5 V, R G = 2.5 W )
Total Gate Charge
(V DS = ? 15 V, V GS = ? 5 V, I D = ? 0.8 A)
Gate ? Source Charge
(V DS = ? 15 V, V GS = ? 5 V, I D = ? 0.8 A)
Gate ? Drain Charge
(V DS = ? 15 V, V GS = ? 5 V, I D = ? 0.8 A)
t d(on)
t r
t d(off)
t f
Q tot
Q gs
Q gd
7.0
9.0
9.0
3.0
2.5
0.75
1.0
ns
nC
BODY ? DRAIN DIODE RATINGS (Note 1)
Diode Forward On ? Voltage (Note 2)
(I S = ? 0.6 A, V GS = 0 V)
(I S = ? 0.6 A, V GS = 0 V, T J = 150 ° C)
Reverse Recovery Time
(I S = ? 1 A, dI S /dt = 100 A/ m s, V GS = 0 V)
V SD
t rr
t a
? 0.8
? 0.6
13.5
10.5
? 1.0
V
ns
t b
3.0
Reverse Recovery Stored Charge
(I S = ? 1 A, dI S /dt = 100 A/ m s, V GS = 0 V)
Q RR
0.008
m C
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
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